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>> JDI plans to start mass production of flexible LCD panels in 2018 20th,March,2018
In early 2017, Japan Display (JDI) announced the development of a technology called Full Active Flex. This technology uses a plastic substrate in the liquid crystal panel, thus achieving a flexible TFT LCD design. It will be first applied to the 5.5'' Full HD LCD panel of a smartphone. JDI has already demonstrated samples at its technology show. JDI plans to start mass production of Full Active Flex flexible LCD panels in 2018.
JDI Challenges Full Active Flex's Flexible AMOLED Panel
Currently, AMOLED uses its advanced flexible display design to lead the smart phone panel market, such as the curved edge display panel of the Samsung Galaxy Edge series. Apple is also about to adopt AMOLED in its 2017 new iPhone. In the mobile device market, AMOLED continues to challenge TFT LCD technology. Samsung Display (SDC) has dominated the AMOLED market for 10 years. In 2016, Samsung demonstrated that AMOLED panel production capacity and shipments have reached nearly 400 million units, and will challenge more than 500 million units in 2017.
In order to catch up with Samsung's display and OLED boom, many panel makers, especially mainland China's panel makers such as BOE, Tianma, Huaxing, Guoxian, and Hehui, are investing in flexible AMOLED panel factories, aiming to invest in after 2018. Mass production. However, due to the evaporation process using a fine metal mask, it is quite difficult to achieve mass production of AMOLEDs. In order to avoid direct competition with Samsung Display, JDI adopts a different strategy. In the development of flexible OLEDs, TFT LCD is also used to develop Full Active Flex panels instead of simply locking the flexible screen in AMOLED.
Technical Challenges Faced by Full Active Flex
Due to the autonomous lighting technology, OLEDs can be used in displays with a flexible (polyimide) substrate. However, TFT LCD cannot easily achieve this because it is a high temperature process and requires LED backlight. In order to develop Full Active Flex, JDI has improved every stage of the LCD panel and LCD module assembly process, including the use of new materials and new technologies. IHS Markit conducted an extremely detailed analysis of the new technology of JDI.
First of all, JDI has improved various new TFT panel technologies for Full Active Flex as follows.
Development of new flexible film substrates
Due to the self-emission structure, AMOLED does not require a thin-film substrate with high transparency. However TFT LCDs require backlighting. The thin film substrate of the TFT battery requires a high transmittance, but cannot have a color, otherwise the backlight efficiency is affected. Meanwhile, a polyimide film substrate generally used for a flexible AMOLED substrate is orange and has a low transmittance; therefore, a flexible polyimide film cannot be used as a flexible LCD panel.
As a replacement, JDI has developed a new thin film substrate for flexible LCD panels. This new film substrate can not only withstand the high-temperature TFT calendering process, but also has high penetration. At the same time, JDI has improved the processing technology of the thin film substrate, so this new substrate also does not affect the birefringence effect of the LCD panel.
JDI has not revealed the source of supply for this new thin film substrate material. IHS Markit speculates that it is a transparent and colorless polyimide film jointly developed by many different film and chemical material manufacturers in Japan.
Application of New LTOS (Low Temperature Metal Oxide) TFT Technology
Even if a substrate that can withstand high temperatures is used, the annealing process in the TFT array process may damage the thin film substrate. In other words, the array process temperature of the TFT is higher than that of the OLED, and the flexible substrate cannot withstand such a high temperature. Therefore, JDI has developed the latest Low Temperature Oxide Semiconductor (LTOS) process.
At present, the mainstream technology of LCD panels is divided into amorphous silicon (a-Si), low-temperature polysilicon (LTPS), and metal oxide (Oxide), while JDI's LTOS combines low-temperature polysilicon and metal oxides.
Although referred to as "low temperature," the current mainstream low temperature polysilicon (LTPS) TFT process requires approximately 500 degrees in an annealing process to crystallize polycrystalline silicon. LTOS uses an oxide semiconductor that can achieve high electron mobility without annealing. This ensures that the crystallization process does not damage the film substrate.
In May 2016, JDI announced the signing of a joint technology agreement with the Semiconductor Energy Laboratory (SEL) in Japan. The company previously developed IGZO (indium gallium zinc oxide) TFT technology with Sharp. With the addition of SEL, JDI will develop LTOS TFT arrays for deposition in lower temperature processes.
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